Purcell factor enhanced scattering efficiency in silicon nanocrystal doped micro-cavities

Scattering induced by nano-particles in a microcavity is investigated for the case of silicon nanocrystal doped microtoroids and a significant enhancement of scattering into the originally doubly-degenerate cavity eigenmodes is found, exceeding >99.42%

Ultralow-threshold erbium-implanted toroidal microlaser on silicon

We present an erbium-doped microlaser on silicon operating at a wavelength of 1.5 mum that operates at a launched pump threshold as low as 4.5 muW. The 40 mum diameter toroidal microresonator is made using a combination of erbium ion implantation, photolithography, wet and dry etching, and laser annealing, using a thermally grown SiO2 film on a Si substrate as a starting material. The microlaser, doped with an average Er concentration of 2x10^(19) cm(-3), is pumped at 1480 nm using an evanescently coupled tapered optical fiber. Cavity quality factors as high as 3.9x10^(7) are achieved, corresponding to a modal loss of 0.007 dB/cm, and single-mode lasing is observed

Design principles for particle plasmon enhanced solar cells

We develop fundamental design principles for increasing the efficiency of solar cells using light trapping by scattering from metal nanoparticles. We show that cylindrical and hemispherical particles lead to much higher path length enhancements than spherical particles, due to enhanced near-field coupling, and that the path length enhancement for an electric point dipole is even higher than the Lambertian value. Silver particles give much higher path length enhancements than gold particles. The scattering cross section of the particles is very sensitive to the thickness of a spacer layer at the substrate, which provides additional tunability in the design of particle arrays.This work is part of the Joint Solar Programme JSP of FOM, which is financially supported by NWO. The JSP is cofinanced by the Foundation Shell Research

Purcell factor enhanced scattering efficiency in optical microcavities

Scattering processes in an optical microcavity are investigated for the case of silicon nanocrystals embedded in an ultra-high Q toroid microcavity. Using a novel measurement technique based on the observable mode-splitting, we demonstrate that light scattering is highly preferential: more than 99.8% of the scattered photon flux is scattered into the original doubly-degenerate cavity modes. The large capture efficiency is attributed to an increased scattering rate into the cavity mode, due to the enhancement of the optical density of states over the free space value and has the same origin as the Purcell effect in spontaneous emission. The experimentally determined Purcell factor amounts to 883

The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals

Synthesis of Ge nanocrystals in SiO2 films is carried out by precipitation from a supersaturated solid solution of Ge in SiO2 made by Ge ion implantation. The films exhibit strong room-temperature visible photoluminescence. The measured photoluminescence peak energy and lifetimes show poor correlations with nanocrystal size compared to calculations involving radiative recombination of quantum-confined excitons in Ge quantum dots. In addition, the photoluminescence spectra and lifetime measurements show only a weak temperature dependence. These observations strongly suggest that the observed visible luminescence in our samples is not due to the radiative recombination of quantum-confined excitons in Ge nanocrystals. Instead, observations of similar luminescence in Xe+ -implanted samples and reversible PL quenching by hydrogen or deuterium suggest that radiative defect centers in the SiO2 matrix are responsible for the observed luminescence

Demonstration of an erbium doped microdisk laser on a silicon chip

An erbium doped micro-laser is demonstrated utilizing $\mathrm{SiO_{2}}$ microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering gallery type (WGM) modes with intrinsic optical quality factors of up to $6\times{10^{7}}$ and were doped with trivalent erbium ions (peak concentration $\mathrm{\sim3.8\times{10^{20}cm^{-3})}}$ using MeV ion implantation. Coupling to the fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber. Upon pumping of the $^{4}I_{15/2}\longrightarrow$ $^{4}I_{13/2}$ erbium transition at 1450 nm, a gradual transition from spontaneous to stimulated emission was observed in the 1550 nm band. Analysis of the pump-output power relation yielded a pump threshold of 43 $\mathrm{\mu}$W and allowed measuring the spontaneous emission coupling factor: $\beta\approx1\times10^{-3}$

Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2

Two sources of room temperature visible luminescence are identified from SiO2 films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe + -implanted SiO2 films and SiO2 films containing Si nanocrystals, a luminescence feature attributable to defects in the SiO2 matrix is unambiguously identified. Hydrogen passivation of the films selectively quenches the matrix defect luminescence, after which luminescence attributable to Si nanocrystals is evident, with a lifetime on the order of milliseconds. The peak energy of the remaining luminescence attributable to Si nanocrystals ``redshifts'' as a function of different processing parameters that might lead to increased nanocrystal size and the intensity is directly correlated to the formation of Si nanocrystals. Upon further annealing hydrogen-passivated samples at low temperatures (< 500 °C), the intensity of nanocrystal luminescence increases by more than a factor of 10

Size-dependent electron-hole exchange interaction in Si nanocrystals

Silicon nanocrystals with diameters ranging from [approximate]2 to 5.5 nm were formed by Si ion implantation into SiO2 followed by annealing. After passivation with deuterium, the photoluminescence (PL) spectrum at 12 K peaks at 1.60 eV and has a full width at half maximum of 0.28 eV. The emission is attributed to the recombination of quantum-confined excitons in the nanocrystals. The temperature dependence of the PL intensity and decay rate at several energies between 1.4 and 1.9 eV was determined between 12 and 300 K. The temperature dependence of the radiative decay rate was determined, and is in good agreement with a model that takes into account the energy splitting between the excitonic singlet and triplet levels due to the electron-hole exchange interaction. The exchange energy splitting increases from 8.4 meV for large nanocrystals ([approximate]5.5 nm) to 16.5 meV for small nanocrystals ([approximate]2 nm). For all nanocrystal sizes, the radiative rate from the singlet state is 300–800 times larger than the radiative rate from the triplet state

Fabrication and characterization of erbium-doped toroidal microcavity lasers

Erbium-doped SiO2 toroidal microcavity lasers are fabricated on a Si substrate using a combination of optical lithography, etching, Er ion implantation, and CO2 laser reflow. Erbium is either preimplanted in the SiO2 base material or postimplanted into a fully fabricated microtoroid. Three-dimensional infrared confocal photoluminescence spectroscopy imaging is used to determine the spatial distribution of optically active Er ions in the two types of microtoroids, and distinct differences are found. Microprobe Rutherford backscattering spectrometry indicates that no macroscopic Er diffusion occurs during the laser reflow for preimplanted microtoroids. From the measured Er doping profiles and calculated optical mode distributions the overlap factor between the Er distribution and mode profile is calculated: Gamma=0.066 and Gamma=0.02 for postimplanted and preimplanted microtoroids, respectively. Single and multimode lasing around 1.5 µm is observed for both types of microtoroids, with the lowest lasing threshold (4.5 µW) observed for the preimplanted microtoroids, which possess the smallest mode volume. When excited in the proper geometry, a clear mode spectrum is observed superimposed on the Er spontaneous emission spectrum. This result indicates the coupling of Er ions to cavity modes